Power converters, especially those exploiting fast-switching devices, suffer from ringing, which worsens efficiency, EMI performance and increases the stress of components. Traditional approaches, such as RC snubber and series gate resistance, only partially mitigate the problem, whereas, active gate driver implies sub-optimal switching waveforms. This paper presents a new criterion for controlling the turn-on and the turn-off of a power transistor using a three-levels current driver, which results in optimal switching waveforms. The method shows better performance in terms of efficiency and transient slopes compared to traditional approaches.

A Criterion for an Optimal Switching of Power Transistors / Quitadamo, MATTEO VINCENZO; Raviola, Erica; Fiori, Franco. - STAMPA. - (2019). (Intervento presentato al convegno 2019 IEEE 12th Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo) tenutosi a Haining, Hangzhou (China) nel 21-23 October 2019) [10.1109/EMCCompo.2019.8919738].

A Criterion for an Optimal Switching of Power Transistors

Matteo Vincenzo Quitadamo;Erica Raviola;Franco Fiori
2019

Abstract

Power converters, especially those exploiting fast-switching devices, suffer from ringing, which worsens efficiency, EMI performance and increases the stress of components. Traditional approaches, such as RC snubber and series gate resistance, only partially mitigate the problem, whereas, active gate driver implies sub-optimal switching waveforms. This paper presents a new criterion for controlling the turn-on and the turn-off of a power transistor using a three-levels current driver, which results in optimal switching waveforms. The method shows better performance in terms of efficiency and transient slopes compared to traditional approaches.
2019
978-1-7281-4262-3
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2756493
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