Archivio Istituzionale della RicercaIn this paper the sensitivity of FinFETs AC performances vs. variations of various physical parameters is analyzed at varying bias, and in particular with Independent Gates (IG) bias chosen to exploit the unique back-gating properties of these multi-gate devices. Sensitivity charts, extracted through a numerically efficient, yet accurate, physics-based TCAD simulation method, are identified as a valuable design tool for the sensitivity aware development of RF building blocks.
RF sensitivity analysis of independent-gates FinFETs for analog applications exploiting the back-gating effect / Bughio, A. M.; Guerrieri, S. Donati; Bonani, F.; Ghione, G.. - STAMPA. - (2017), pp. 256-259. (Intervento presentato al convegno European Microwave Integrated Circuits Conference tenutosi a Nuremburg, Germany nel 9-10 October, 2017) [10.23919/EuMIC.2017.8230708].
RF sensitivity analysis of independent-gates FinFETs for analog applications exploiting the back-gating effect
Bughio, A. M.;Guerrieri, S. Donati;Bonani, F.;Ghione, G.
2017
Abstract
In this paper the sensitivity of FinFETs AC performances vs. variations of various physical parameters is analyzed at varying bias, and in particular with Independent Gates (IG) bias chosen to exploit the unique back-gating properties of these multi-gate devices. Sensitivity charts, extracted through a numerically efficient, yet accurate, physics-based TCAD simulation method, are identified as a valuable design tool for the sensitivity aware development of RF building blocks.
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https://hdl.handle.net/11583/2695410
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