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EnglishThe results of six years of continuous monitoring are presented in this paper that refer to eight outdoors PhotoVoltaic (PV) plants. The monitored plants are based on different technologies: mono-crystalline silicon (m-Si), poli-crystalline silicon (p-Si), string ribbon silicon, Copper Indium Gallium Selenide (CIGS) thin film and Cadmium Telluride (CdTe) thin film. Mono-crystalline silicon modules and thin-film modules are used both in fixed installation and on x-y tracking systems. The results are expressed in terms of degradation rate of the efficiency of each PV plant, which is estimated from the measurements provided by a multi-channel data-acquisition system that senses both electrical and environmental quantities. A comparison with the electrical characterization of each plant obtained by means of the transient charge of a capacitive load is also proposed. The capacitive-load technique has been implemented immediately after the installation of the PV plants and after 78 months of operation. The obtained results show that both the m-Si plants in fixed installation and on the tracking system had a negligible degradation, while p-Si and string-ribbon Si exhibited a moderate degradation. Higher was the degradation obtained for the thin-film based plants, with a worst behaviour of the plants installed on the tracking systems.
Degradation rate of eight photovoltaic plants: results during six years of continuous monitoring / Carullo, Alessio; Castellana, Antonella; Vallan, Alberto; Ciocia, Alessandro; Spertino, Filippo. - ELETTRONICO. - Unico(2017), pp. 1-6. ((Intervento presentato al convegno 22nd IMEKO TC-4 International Symposium tenutosi a Iasi, Romania nel September, 14-15, 2017.
| Titolo: | Degradation rate of eight photovoltaic plants: results during six years of continuous monitoring | |
| Autori: | ||
| Data di pubblicazione: | 2017 | |
| Abstract: | The results of six years of continuous monitoring are presented in this paper t...hat refer to eight outdoors PhotoVoltaic (PV) plants. The monitored plants are based on different technologies: mono-crystalline silicon (m-Si), poli-crystalline silicon (p-Si), string ribbon silicon, Copper Indium Gallium Selenide (CIGS) thin film and Cadmium Telluride (CdTe) thin film. Mono-crystalline silicon modules and thin-film modules are used both in fixed installation and on x-y tracking systems. The results are expressed in terms of degradation rate of the efficiency of each PV plant, which is estimated from the measurements provided by a multi-channel data-acquisition system that senses both electrical and environmental quantities. A comparison with the electrical characterization of each plant obtained by means of the transient charge of a capacitive load is also proposed. The capacitive-load technique has been implemented immediately after the installation of the PV plants and after 78 months of operation. The obtained results show that both the m-Si plants in fixed installation and on the tracking system had a negligible degradation, while p-Si and string-ribbon Si exhibited a moderate degradation. Higher was the degradation obtained for the thin-film based plants, with a worst behaviour of the plants installed on the tracking systems. | |
| ISBN: | 978-606-13-3975-4 | |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| PV-LAB_degradation_proceedings_final.pdf | Author version | 2. Post-print / Author's Accepted Manuscript | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
http://hdl.handle.net/11583/2684058
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