PORTO @ Archivio Istituzionale della Ricerca

We present a theoretical and experimental study on the design, fabrication and characterization of Schottky Barrier Diodes (SBD) on commercial 4H-SiC epitaxial layers. Numerical simulations were performed with a commercial tool on different edge termination structures, with the aim of optimizing the device behavior. For each termination design, SBD were fabricated and characterized by means of electrical measurements vs. temperature. Simulations provided also useful data for the assessment of the device process technology.

Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes / Furno, Mauro Stefano; Bonani, Fabrizio; Ghione, Giovanni; Ferrero, Sergio; Porro, Samuele; Mandracci, Pietro; Scaltrito, Luciano; Perrone, Denis; Richieri, G.; Merlin, Luigi. - ELETTRONICO. - 483-485:(2005), pp. 941-944. (Intervento presentato al convegno 5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 tenutosi a Bologna, Italy nel 31 August - 4 September 2004) [10.4028/www.scientific.net/MSF.483-485.941].

Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes

FURNO, Mauro Stefano;BONANI, FABRIZIO;GHIONE, GIOVANNI;FERRERO, SERGIO;PORRO, SAMUELE;MANDRACCI, Pietro;SCALTRITO, LUCIANO;PERRONE, DENIS;
2005

Abstract

We present a theoretical and experimental study on the design, fabrication and characterization of Schottky Barrier Diodes (SBD) on commercial 4H-SiC epitaxial layers. Numerical simulations were performed with a commercial tool on different edge termination structures, with the aim of optimizing the device behavior. For each termination design, SBD were fabricated and characterized by means of electrical measurements vs. temperature. Simulations provided also useful data for the assessment of the device process technology.
2005
MATERIALS SCIENCE FORUM
4.1 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2658103