GIOVINAZZO, CECILIA
 Distribuzione geografica
Continente #
NA - Nord America 321
EU - Europa 279
AS - Asia 92
AF - Africa 2
Continente sconosciuto - Info sul continente non disponibili 2
SA - Sud America 2
Totale 698
Nazione #
US - Stati Uniti d'America 313
IT - Italia 96
GB - Regno Unito 78
DE - Germania 46
CN - Cina 26
SG - Singapore 20
IE - Irlanda 17
FR - Francia 14
TR - Turchia 14
IR - Iran 9
CA - Canada 8
CH - Svizzera 8
JO - Giordania 8
MY - Malesia 7
HK - Hong Kong 5
BE - Belgio 4
SE - Svezia 4
UA - Ucraina 3
A1 - Anonimo 2
ES - Italia 2
FI - Finlandia 2
JP - Giappone 2
SN - Senegal 2
AR - Argentina 1
BR - Brasile 1
CZ - Repubblica Ceca 1
KR - Corea 1
MD - Moldavia 1
NL - Olanda 1
PL - Polonia 1
RO - Romania 1
Totale 698
Città #
Southend 76
Chandler 71
Ashburn 32
Princeton 29
Torino 23
Wilmington 21
Singapore 18
Berlin 16
Dublin 15
Beijing 14
Boardman 14
Izmir 14
Ann Arbor 12
San Donato Milanese 10
Fremont 9
Milan 8
Ottawa 8
Turin 6
Zanjan 6
Houston 5
Lausanne 5
Rome 5
Seattle 5
Brussels 4
Cagliari 4
Cambridge 3
Fairfield 3
Piscataway 3
Revigliasco 3
Council Bluffs 2
Frankfurt am Main 2
Guangzhou 2
Helsinki 2
Jacksonville 2
Santa Clara 2
Washington 2
Absecon 1
Aesch 1
Atlanta 1
Bern 1
Caltignaga 1
Changsha 1
Chisinau 1
Falls Church 1
Galati 1
Gloucester 1
Hefei 1
Lake Forest 1
Legnaro 1
Lengede 1
León 1
Lodz 1
Mcallen 1
Miami 1
Monmouth Junction 1
Mountain View 1
Napoli 1
New York 1
Norwalk 1
Palermo 1
Paris 1
Portland 1
Pullach im Isartal 1
Redmond 1
Redwood City 1
San Ramon 1
San Remo 1
Tokyo 1
Vercelli 1
Woodbridge 1
Xian 1
Zaporozhye 1
Zhitomir 1
Zurich 1
Totale 494
Nome #
Resistive switching in ALD metal-oxides with engineered interfaces 134
Tests of SEU effects of circuits developed in 130 nm CMOS technology 126
Resistive Switching in Sub-micrometric ZnO polycrystalline Films 124
Effects of single-pulse Al2O3 insertion in TiO2 oxide memristors by low temperature ALD 93
Multi-ReRAM synapses for artificial neural network training 71
Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs) 67
The key impact of incorporated Al2O3barrier layer on W-based ReRAM switching performance 63
Switching Kinetics Control of W-Based ReRAM Cells in Transient Operation by Interface Engineering 43
Totale 721
Categoria #
all - tutte 2.181
article - articoli 1.451
book - libri 0
conference - conferenze 433
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.065


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202071 0 0 0 3 6 3 6 7 11 14 12 9
2020/202158 9 10 2 4 0 6 1 2 7 5 10 2
2021/2022136 11 5 1 3 2 11 5 4 14 3 41 36
2022/2023180 13 36 11 23 14 32 9 8 24 1 7 2
2023/202460 0 2 5 0 6 15 4 11 1 3 5 8
2024/202537 1 23 5 8 0 0 0 0 0 0 0 0
Totale 721