Tests of SEU effects of circuits developed in 130 nm CMOS technology

Two circuits have been studied for Single Event Upset (SEU) effects: ToPix4 (Torino Pixel) and the GBLD (GigaBit Laser Driver). The first one is the 4th generation custom prototype developed for the readout of the silicon pixel devices for the Micro Vertex Detector [1] of the PANDA [2] experiment. INFN, specifically the Sezione of Torino, is the leader of the development of this ASIC. The second one is part of the GBT project developed at CERN for the data transmission on optical links. It controls the laser diode that drives the optical fiber. INFN Torino department is involved in the design of this specific chip. Both ASICS are developed in a 130 nm CMOS technology and SEU protection techniques are applied to the digital parts.