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Tungsten (W) is one of the most promising materials to be used in resistive random-access memory electrodes due to its low work function and compatibility with semiconductors, which raises the possibility of device integration, scalability, and low power consumption. However, W has multiple oxidation states that affect device reliability, due to the formation of semistable oxides at the switching interface. W chemical interaction is modulated through the insertion of Al2O3 or Ti interfacial layers. The time-dependent switching kinetics are investigated in transient Set/Reset operations. It is observed that a compact and stoichiometric atomic-layer-deposited Al2O3 barrier layer completely prevents W oxidation, resulting in a sharp current transient. The use of a sputtered Ti buffer layer allows a partial W oxidation, defining a tunable high-resistance state by pulse rise time control. Notable improvements in endurance, power consumption, resistance state stabilization, and cycle-to-cycle and device-to-device variability are reported. Switching kinetics and conductive nanofilament evolution are studied in detail to understand the microscopic effect of the interface modifications. The tunability of multi-HRS states by pulse timing control in Pt/HfO2/Ti/W is in the interest of network and brain-inspired computing applications, adding a degree of freedom in the modulation of its resistance.

Switching Kinetics Control of W-Based ReRAM Cells in Transient Operation by Interface Engineering / Shahrabi, E.; Giovinazzo, C.; Hadad, M.; LaGrange, T.; Ramos, M.; Ricciardi, C.; Leblebici, Y.. - In: ADVANCED ELECTRONIC MATERIALS. - ISSN 2199-160X. - ELETTRONICO. - 5:8(2019), p. 1800835.

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