Archivio Istituzionale della RicercaIn this paper, a characterization procedure for III-V compound semiconductor technology is proposed, with the aim of investigating the performance of state-of-the-art transistors for mm-wave applications. The whole procedure has been successfully applied to a 0.1-μm GaAs pHEMT process, which was characterized under DC, small- and large-signal operations, after a first stress experiment necessary to assess its robustness and stability.
Characterization Procedure for Effective Evaluation of III-V Compound Semiconductor Technology / Choupan, Negar; Vadalà, Valeria; Bosi, Gianni; Ramella, Chiara; Grassi, Marco; Crupi, Giovanni; Giofrè, Rocco; Raffo, Antonio; Vannini, Giorgio. - (2025), pp. 1-4. (Intervento presentato al convegno 2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2025 tenutosi a Torino (Ita) nel 10-11 April 2025) [10.1109/inmmic64198.2025.10975315].
Characterization Procedure for Effective Evaluation of III-V Compound Semiconductor Technology
Ramella, Chiara;
2025
Abstract
In this paper, a characterization procedure for III-V compound semiconductor technology is proposed, with the aim of investigating the performance of state-of-the-art transistors for mm-wave applications. The whole procedure has been successfully applied to a 0.1-μm GaAs pHEMT process, which was characterized under DC, small- and large-signal operations, after a first stress experiment necessary to assess its robustness and stability.
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https://hdl.handle.net/11583/3004913