A New Monolithic Emitter-Switching Bipolar Transistor (ESBT) in High-Voltage Converter Applications

In this paper a new family of devices, which is based on a Bipolar-MOSFET cascode connection, is presented. The monolithic device is suitable for high-voltage applications. The basic features of this power device, the Emitter-Switching Bipolar Transistor (ESBT) component, are described both in terms of physical structure and electrical performances. The field of applications along with the driver requirement is discussed too. The advantages and drawbacks of the presented device in terms of both switching losses and base-gate command circuitry are compared with those of a MOSFET. Finally, the new device is tested by using as a workbench an actual off-line power supply (forward converter), in order to carry out useful information for the power converter designer about the switching behavior and the power losses.