Analysis of Radiation-induced Transient Errors on 7nm FinFET Technology

FinFET technology has recently gained attention in the semiconductor industry due to many benefits it offers, such as lower power consumption, faster performance, and lower static leakage current. However, the behaviour of this technology for mission-critical applications where radiation effects are the main concern is not very well known. This work is dedicated to the detailed characterization of radiation-induced transient errors in 7 nm FinFET technology, calculating the sensitivity of basic logic gates implemented using ASAP7 PDK library and predicting the distribution of heavy ions induced Single Event Transient (SET) pulses.