The novel technique introduced in [1] is exploited to address a full variability analysis of a GaAs MMIC X-band power amplifier, including the statistical variations of several technological parameters, both in the active and passive components. The active device is modelled by means of X-parameters, directly extracted from physics-based analysis. A non-50 O X-Par model is used to take into account the input port mismatch with respect to the conventional 50 O reference. The scattering parameters of the passive structures are extracted from accurate electromagnetic simulations and then imported into the circuit simulator through data intercharge files (e.g. MDIF or CITIfile) as a function of the most important MMIC fabrication parameters, e.g. the thickness of the MIM capacitor dielectric layer. The analysis shows that more than 10% of output power variations can be ascribed to the concurrent MIM and doping variations in conventional GaAs MMIC technology.

Global Assessment of PA variability through concurrent Physics-based X-parameter and Electro-Magnetic simulations / Donati Guerrieri, S.; Ramella, C.; Bonani, F.; Ghione, G.. - ELETTRONICO. - (2021), pp. 213-216. ((Intervento presentato al convegno 15th European Microwave Integrated Circuits Conference, EuMIC 2020 tenutosi a Utrecht, Netherlands nel 10-15 January 2021 [10.1109/EuMIC48047.2021.00065].

Global Assessment of PA variability through concurrent Physics-based X-parameter and Electro-Magnetic simulations

Donati Guerrieri S.;Ramella C.;Bonani F.;Ghione G.
2021

Abstract

The novel technique introduced in [1] is exploited to address a full variability analysis of a GaAs MMIC X-band power amplifier, including the statistical variations of several technological parameters, both in the active and passive components. The active device is modelled by means of X-parameters, directly extracted from physics-based analysis. A non-50 O X-Par model is used to take into account the input port mismatch with respect to the conventional 50 O reference. The scattering parameters of the passive structures are extracted from accurate electromagnetic simulations and then imported into the circuit simulator through data intercharge files (e.g. MDIF or CITIfile) as a function of the most important MMIC fabrication parameters, e.g. the thickness of the MIM capacitor dielectric layer. The analysis shows that more than 10% of output power variations can be ascribed to the concurrent MIM and doping variations in conventional GaAs MMIC technology.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2872834