PORTO @ 
Archivio Istituzionale della Ricerca
IRIS è la soluzione IT che facilita la raccolta e la gestione dei dati relativi alle attività e ai prodotti della ricerca. Fornisce a ricercatori, amministratori e valutatori gli strumenti per monitorare i risultati della ricerca, aumentarne la visibilità e allocare in modo efficace le risorse disponibili.
EnglishModeling the active device is a key step for the successful statistical analysis of power amplifiers: the nonlinear model must not only depend on the most relevant device fabrication parameters, but should also work accurately in source/load-pull analysis, since variations of the passive embedding network effectively act as a load-pull at the active device ports. We demonstrate that the X-parameter model extracted from physics-based nonlinear TCAD simulations is extremely accurate for load-pull analysis. The X-parameter model is coupled to electromagnetic simulations to assist the variability-aware design of a GaAs MMIC X-band power amplifier (PA): concurrent variations of the active device doping and of the capacitor dielectric layer thickness are considered as the main contributions to PA variability. Two possible output matching networks, with distributed or semi-lumped design, are compared: already for moderate doping variations the PA output power spread is dominated by the active device variability, while passive network variations are always the relevant contribution to PA efficiency.
PA design and statistical analysis through X-par driven load-pull and EM simulations / Guerrieri, S. Donati; Ramella, C.; Bonani, F.; Ghione, G.. - ELETTRONICO. - (2020), pp. 1-3. ((Intervento presentato al convegno 2020 International Workshop on Integrated Nonlinear Microwave and Millimeter-wave Circuits (INMMIC) tenutosi a Cardiff (UK) nel 16-17 July.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo
| Titolo: | PA design and statistical analysis through X-par driven load-pull and EM simulations |
| Autori: | |
| Data di pubblicazione: | 2020 |
| Abstract: | Modeling the active device is a key step for the successful statistical analysis of power amplifi...ers: the nonlinear model must not only depend on the most relevant device fabrication parameters, but should also work accurately in source/load-pull analysis, since variations of the passive embedding network effectively act as a load-pull at the active device ports. We demonstrate that the X-parameter model extracted from physics-based nonlinear TCAD simulations is extremely accurate for load-pull analysis. The X-parameter model is coupled to electromagnetic simulations to assist the variability-aware design of a GaAs MMIC X-band power amplifier (PA): concurrent variations of the active device doping and of the capacitor dielectric layer thickness are considered as the main contributions to PA variability. Two possible output matching networks, with distributed or semi-lumped design, are compared: already for moderate doping variations the PA output power spread is dominated by the active device variability, while passive network variations are always the relevant contribution to PA efficiency. |
| ISBN: | 978-1-7281-2645-6 |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| INMMIC 20.pdf | Articolo principale | 2a Post-print versione editoriale / Version of Record | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
| InMMIC_2020_final_v2.pdf | Versione dell'autore post-referee | 2. Post-print / Author's Accepted Manuscript | PUBBLICO - Tutti i diritti riservati | Visibile a tuttiVisualizza/Apri |
http://hdl.handle.net/11583/2842626
Copyright © 2020