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EnglishThe Green’s Function based TCAD device variability analysis is extended to allow for temperature-dependent variability, with negligible overhead in terms of simulation time with respect to fixed temperature simulations. We provide temperature and bias-dependent 3D variability analysis of the DC current for a FinFET structure from the 22 nm node, showing how to predict and mitigate the effects of poor thermal management. Based on the quasi-stationary assumption, preliminary analysis of self-heating effects of a FinFET medium power amplifier is also presented.
TCAD analysis of FinFET temperature-dependent variability for analog applications / Guerrieri, S. Donati; Bonani, F.; Ghione, G.. - ELETTRONICO. - (2019), pp. 1-4. ((Intervento presentato al convegno 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) tenutosi a Udine (Italy) nel 4-6 Sept. 2019.
| Titolo: | TCAD analysis of FinFET temperature-dependent variability for analog applications |
| Autori: | |
| Data di pubblicazione: | 2019 |
| Abstract: | The Green’s Function based TCAD device variability analysis is extended to allow for temperature-...dependent variability, with negligible overhead in terms of simulation time with respect to fixed temperature simulations. We provide temperature and bias-dependent 3D variability analysis of the DC current for a FinFET structure from the 22 nm node, showing how to predict and mitigate the effects of poor thermal management. Based on the quasi-stationary assumption, preliminary analysis of self-heating effects of a FinFET medium power amplifier is also presented. |
| ISBN: | 978-1-7281-0940-4 |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| SISPAD 19.pdf | Articolo principale | 2a Post-print versione editoriale / Version of Record | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
http://hdl.handle.net/11583/2761129
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