Archivio Istituzionale della RicercaThe present work proposes a methodology to predict radiation-induced Single Event Transient (SET) phenomena within the silicon structure of Flash-based FPGA devices. The method is based on a MonteCarlo analysis, which allows to calculate the effective duration and amplitude of the SET once generated by the radiation strike. The method allows to effectively characterize the sensitivity of a circuit against the transient effect phenomenon. Experimental results provide a comparison between different radiation tests data, performed with different Linear Energy Transfer (LET) and the respective sensitiveness of SETs.
On the prediction of Radiation-induced SETs in Flash-based FPGAs / Azimi, Sarah; Du, Boyang; Sterpone, Luca. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - ELETTRONICO. - 64:(2016), pp. 230-234. [10.1016/j.microrel.2016.07.106]
On the prediction of Radiation-induced SETs in Flash-based FPGAs
AZIMI, SARAH;DU, BOYANG;STERPONE, LUCA
2016
Abstract
The present work proposes a methodology to predict radiation-induced Single Event Transient (SET) phenomena within the silicon structure of Flash-based FPGA devices. The method is based on a MonteCarlo analysis, which allows to calculate the effective duration and amplitude of the SET once generated by the radiation strike. The method allows to effectively characterize the sensitivity of a circuit against the transient effect phenomenon. Experimental results provide a comparison between different radiation tests data, performed with different Linear Energy Transfer (LET) and the respective sensitiveness of SETs.
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https://hdl.handle.net/11583/2651277
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