The increasing technology node scaling makes VLSI devices extremely vulnerable to Single Event Effects (SEEs) induced by highly charged particles such as heavy ions, increasing the sensitivity to Single Event Transients (SETs). In this paper, we describe a new methodology combining an analytical and oriented model for analyzing the sensitivity of SET nanometric technologies. The paper includes radiation test experiments performed on Flash-based FPGAs using heavy ions radiation beam. Experimental results are detailed and commented demonstrating the effective mitigation capabilities thanks to the adoption of the developed model.
|Titolo:||Radiation-induced single event transients modeling and testing on nanometric flash-based technologies|
|Data di pubblicazione:||2015|
|Digital Object Identifier (DOI):||10.1016/j.microrel.2015.07.035|
|Appare nelle tipologie:||1.1 Articolo in rivista|