Compact Model for Multiple Independent Gates Ambipolar Devices

The model presented is a charge-based model that assures the continuity of the current and the analytical derivability of charges to obtain the parasitic capacitances. It has been conceived to support the multiple independent gates, typical of nano-array structures, where each gate controls the charge in the channel. Charge conservation implies constant current in the different section of the multiple gate nanowire FET, making possible the development of a compact model for an arbitrary number of gates. The model has been used to describe different structures (i.e. number of gates, dimension of the single transistor and ranges of applied voltages) under static conditions and the results have been verified on Silvaco TCAD simulations. The modeling approach and the attained results for some cases of study will be presented and discussed.