Silicon carbide is a semiconductor of choice for the fabrication of high-power, high-temperature and high-frequency electronic devices. Nevertheless, such a material still presents many problems as regards the crystallographic quality and the presence of defects, which influence the device performance. We have investigated 4H-SiC wafers and 4H-SiC epitaxial layers by microscopy and structural techniques in order to obtain information about the defect morphology. The goal of this analysis will be to correlate them with the electrical properties of SiC for power electronic device applications.
|Titolo:||Defect characterization of 4H-SiC wafers for power electronic device applications|
|Data di pubblicazione:||2002|
|Digital Object Identifier (DOI):||10.1088/0953-8984/14/48/394|
|Appare nelle tipologie:||1.1 Articolo in rivista|