This paper presents the design of a broadband high-efficiency Class-EM/F3power amplifier (PA). The PA exhibits a significantly reduced peak drain voltage compared to its predecessor (Class-EM) and a large fractional bandwidth of 34.3% at peak power as well as 6 dB output back-off power (OBO) while satisfying the zero voltage switching, zero voltage derivative switching, zero current switching, and zero current derivative switching conditions to minimize power dissipation within the active device. A Class-EM/F3 PA employing a transmission-line load network was proposed and implemented using GaN HEMTs. The PA exhibits a drain efficiency (DE) of 77%, a power-added efficiency (PAE) of 72% at a peak output power (P-{text{out}}) of 42.1 dBm at 1.8 GHz. With P-{text{out}} backed-off by 6 dB, the PA delivers a DE of 41% and a PAE of 40%. Across a frequency range from 1.4 to 2 GHz, the PA delivers DE > 67%, PAE > 58%, and a P-{text{out}} of 41.2pm 1 text{dBm}. At 6-dB OBO, the PA delivers DE > 39%, a PAE > 34%, and a P-{text{out}} of 35pm 1.2 text{dBm}.

Bandwidth and Power Back-Off Performances of a Class-EM/F3 Power Amplifier / Mugisho, M.S., Thian, M., Piacibello, A., Camarchia, V., Quay, R.. - (2021), pp. 362-365. (51st European Microwave Conference, EuMC 2021 London (UK) 04-06 April 2022) [10.23919/EuMC50147.2022.9784237].

Bandwidth and Power Back-Off Performances of a Class-EM/F3 Power Amplifier

Piacibello, A.;Camarchia, V.;
2021

Abstract

This paper presents the design of a broadband high-efficiency Class-EM/F3power amplifier (PA). The PA exhibits a significantly reduced peak drain voltage compared to its predecessor (Class-EM) and a large fractional bandwidth of 34.3% at peak power as well as 6 dB output back-off power (OBO) while satisfying the zero voltage switching, zero voltage derivative switching, zero current switching, and zero current derivative switching conditions to minimize power dissipation within the active device. A Class-EM/F3 PA employing a transmission-line load network was proposed and implemented using GaN HEMTs. The PA exhibits a drain efficiency (DE) of 77%, a power-added efficiency (PAE) of 72% at a peak output power (P-{text{out}}) of 42.1 dBm at 1.8 GHz. With P-{text{out}} backed-off by 6 dB, the PA delivers a DE of 41% and a PAE of 40%. Across a frequency range from 1.4 to 2 GHz, the PA delivers DE > 67%, PAE > 58%, and a P-{text{out}} of 41.2pm 1 text{dBm}. At 6-dB OBO, the PA delivers DE > 39%, a PAE > 34%, and a P-{text{out}} of 35pm 1.2 text{dBm}.
2021
9782874870637
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/3017385