Archivio Istituzionale della RicercaThis paper presents a novel GaN-based 3-chip digital class-E Doherty power amplifier (PA) module designed to extend the back-off capabilities of the digital Doherty to deep back-off. Three identical class-E PA chips with digital input driving are combined off-chip in a two-way Doherty configuration for high efficiency in the 5G FR1 frequency band. For a single-tone input signal, the measured final-stage drain efficiency at 3.5 GHz peaks at 68% at 12dB back-off, with a saturated output power of 33dBm. Under a 20MHz, 9dB-PAPR digital OFDM input, the PA module delivers a drain efficiency of 55% at the same frequency.
Novel GaN-Based Digital Class-E Doherty PA with High 12dB OBO Efficiency / Bartolotti, G., Piacibello, A., Camarchia, V., Sun, D., Hoffmann, T., Wentzel, A.. - (2026), pp. 569-572. (2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium (IMS RFTT) Boston (USA) 07-12 June 2026) [10.1109/imsrftt43070.2026.11602144].
Novel GaN-Based Digital Class-E Doherty PA with High 12dB OBO Efficiency
Bartolotti, Giulia;Piacibello, Anna;Camarchia, Vittorio;
2026
Abstract
This paper presents a novel GaN-based 3-chip digital class-E Doherty power amplifier (PA) module designed to extend the back-off capabilities of the digital Doherty to deep back-off. Three identical class-E PA chips with digital input driving are combined off-chip in a two-way Doherty configuration for high efficiency in the 5G FR1 frequency band. For a single-tone input signal, the measured final-stage drain efficiency at 3.5 GHz peaks at 68% at 12dB back-off, with a saturated output power of 33dBm. Under a 20MHz, 9dB-PAPR digital OFDM input, the PA module delivers a drain efficiency of 55% at the same frequency.
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https://hdl.handle.net/11583/3017374