Archivio Istituzionale della RicercaWe present a three-dimensional full-band Monte Carlo (MC3D) study of a silicon single-photon avalanche diode that analyzes the avalanche dynamics for different deep implant (DI) positions. The results show that the Monte Carlo simulation framework is able to describe the dependence of the avalanche buildup time with respect to overvoltage (VOV) and DI depth, therefore demonstrating how valuable is MC3D as a design tool for SPADs.
Full-Band Monte Carlo Analysis of Avalanche Buildup Dynamics in Silicon SPADs / Mudano', A., Liu, D., Errico, L., Niu, Z.e., Bellotti, E., Penna, M., Gola, A., Bertazzi, F., Goano, M., Alasio, Matteo.. - ELETTRONICO. - (2026), pp. 118-119. (26th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Cork (Ire) 19-24 July 2026) [10.1109/NUSOD69851.2026.11687796].
Full-Band Monte Carlo Analysis of Avalanche Buildup Dynamics in Silicon SPADs
Mudano', Angelo;Bertazzi, Francesco;Goano, Michele;Alasio, Matteo.
2026
Abstract
We present a three-dimensional full-band Monte Carlo (MC3D) study of a silicon single-photon avalanche diode that analyzes the avalanche dynamics for different deep implant (DI) positions. The results show that the Monte Carlo simulation framework is able to describe the dependence of the avalanche buildup time with respect to overvoltage (VOV) and DI depth, therefore demonstrating how valuable is MC3D as a design tool for SPADs.
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https://hdl.handle.net/11583/3017035