Archivio Istituzionale della RicercaThis work establishes a methodology based on continuous-wave load-pull data in order to estimate modulated figures of merit for radio-frequency transistors. By automatically accounting for source termination effects without any measurement overhead, the technique allows to fully explore the intrinsic trade-offs between linearity, gain, output power and power added efficiency. The approach is used to experimentally analyze three different layouts of gallium arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) power cells for Wi-Fi 6 applications.
Load/Source-Pull Evaluation of Modulated Performance in GaAs HBT Power Cells for WiFi-6 / Angelotti, Alberto Maria; Florian, Corrado; Gibiino, Gian Piero; Ramella, Chiara; Pirola, Marco; Manni, Francesco; Giofrè, Rocco; Colantonio, Paolo. - (2025), pp. 1-4. (Intervento presentato al convegno 2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2025 tenutosi a Torino (Ita) nel 10-11 April 2025) [10.1109/inmmic64198.2025.10975718].
Load/Source-Pull Evaluation of Modulated Performance in GaAs HBT Power Cells for WiFi-6
Ramella, Chiara;Pirola, Marco;
2025
Abstract
This work establishes a methodology based on continuous-wave load-pull data in order to estimate modulated figures of merit for radio-frequency transistors. By automatically accounting for source termination effects without any measurement overhead, the technique allows to fully explore the intrinsic trade-offs between linearity, gain, output power and power added efficiency. The approach is used to experimentally analyze three different layouts of gallium arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) power cells for Wi-Fi 6 applications.
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2025_INMMIC_HBT.pdf
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1571109324.pdf
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https://hdl.handle.net/11583/3004911