Surface modification of mesoporous silicon for nanoelectronics applications

The method of successive ionic layer deposition of lanthanum fluoride layers was applied to modify the mesoporous silicon structures. It was shown that this method allows transforming of the non-luminescent mesoporous silicon into high stability luminescent material. The obtained structures demonstrate the crucial role of the chemical composition of silicon nanocrystallite surface in the formation of radiated recombination channels and in the stability of porous silicon photoluminescence. The photoluminescence and thermally stimulated luminescence of elaborated structures were compared with nanoporous materials obtained by routine method of electrochemical etching.