Archivio Istituzionale della RicercaThis paper investigates the demodulation of radio-frequency interference (RFI) in two different topologies of current sources implemented in monolithic GaN technology. An analytical model is developed which relates transistor nonlinearities to circuit parasitics. It is then used to design RFI-immune current sources. Simulation results demonstrate the effectiveness of these designs, showing a significant reduction in the output offset current from approximately 10µA to 200nA when subjected to 1V amplitude, 1GHz interference signal.
Susceptibility to RFI of Monolithic GaN Current Sources / Carastro, Filippo; Lena, Davide; Fiori, Franco. - STAMPA. - (2025), pp. 757-762. ( 2025 International Symposium on Electromagnetic Compatibility (EMC Europe) Parigi (Fra) 1-5 September 2025) [10.1109/EMCEurope61644.2025.11176201].
Susceptibility to RFI of Monolithic GaN Current Sources
Carastro, Filippo;Fiori, Franco
2025
Abstract
This paper investigates the demodulation of radio-frequency interference (RFI) in two different topologies of current sources implemented in monolithic GaN technology. An analytical model is developed which relates transistor nonlinearities to circuit parasitics. It is then used to design RFI-immune current sources. Simulation results demonstrate the effectiveness of these designs, showing a significant reduction in the output offset current from approximately 10µA to 200nA when subjected to 1V amplitude, 1GHz interference signal.
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Susceptibility_to_RFI_of_Monolithic_GaN_Current_Sources.pdf
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Susceptibility_to_RFI_of_Monolithic_GaN_Current_Sources.pdf
accesso riservato
Tipologia:
2a Post-print versione editoriale / Version of Record
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https://hdl.handle.net/11583/3003265