Archivio Istituzionale della RicercaThis paper presents the design and characterization of an ultra-wideband (0.8GHz-3.2GHz) hybrid single-stage class-AB power amplifier based on a 25-W packaged GaN device. Over this two-octave bandwidth, the amplifier reaches saturated output power higher than 42dBm with associated efficiency above 53%. An output matching network consisting of a 4section Chebyshev transformer has been implemented based on the optimum load trajectory, targeting a trade-off between output power and efficiency.
A Two-Octave GaN Power Amplifier based on a Multi-Section Chebyshev Transformer / Koliaei, Reza; Bartolotti, Giulia; Zhang, Zhifan; Piacibello, Anna; Camarchia, Vittorio. - ELETTRONICO. - (2025), pp. 1-4. (Intervento presentato al convegno 2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC) tenutosi a Torino (Ita) nel 10-11 April 2025) [10.1109/inmmic64198.2025.10975551].
A Two-Octave GaN Power Amplifier based on a Multi-Section Chebyshev Transformer
Koliaei, Reza;Bartolotti, Giulia;Zhang, Zhifan;Piacibello, Anna;Camarchia, Vittorio
2025
Abstract
This paper presents the design and characterization of an ultra-wideband (0.8GHz-3.2GHz) hybrid single-stage class-AB power amplifier based on a 25-W packaged GaN device. Over this two-octave bandwidth, the amplifier reaches saturated output power higher than 42dBm with associated efficiency above 53%. An output matching network consisting of a 4section Chebyshev transformer has been implemented based on the optimum load trajectory, targeting a trade-off between output power and efficiency.
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https://hdl.handle.net/11583/2999662