This contribution reports the design and preliminary on-wafer characterization of a Ka-band MMIC power amplifier (PA) for an earth observation application using a commercial 100-nm GaN-on-Si technology. Design solutions adopted to deal with constraints and challenges posed by space-grade requirements are discussed in detail. In particular, when adopting a Si substrate, thermal management becomes a major issue, requiring the design to be conceived for low power dissipation. Simulation results of the designed amplifier are in line with the state-of-the-art, with an output power in excess of 10W in the 34 GHz to 37 GHz range, with associated PAE and gain close to 30% and 20 dB, respectively. On-wafer measurements in pulsed conditions confirm the output power capability, but also show some criticisms that need further investigation.

A Ka-band MMIC Power Amplifier in 100-nm GaN-on-Si technology for Space Applications / Ramella, Chiara; Florian, Corrado; del Rocío García González, María; Davies, Iain; Pirola, Marco; Colantonio, Paolo. - ELETTRONICO. - (2023), pp. 1-4. (Intervento presentato al convegno International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 tenutosi a Aveiro (Portugal) nel 08-11 November 2023) [10.1109/INMMIC57329.2023.10321803].

A Ka-band MMIC Power Amplifier in 100-nm GaN-on-Si technology for Space Applications

Ramella, Chiara;Pirola, Marco;
2023

Abstract

This contribution reports the design and preliminary on-wafer characterization of a Ka-band MMIC power amplifier (PA) for an earth observation application using a commercial 100-nm GaN-on-Si technology. Design solutions adopted to deal with constraints and challenges posed by space-grade requirements are discussed in detail. In particular, when adopting a Si substrate, thermal management becomes a major issue, requiring the design to be conceived for low power dissipation. Simulation results of the designed amplifier are in line with the state-of-the-art, with an output power in excess of 10W in the 34 GHz to 37 GHz range, with associated PAE and gain close to 30% and 20 dB, respectively. On-wafer measurements in pulsed conditions confirm the output power capability, but also show some criticisms that need further investigation.
2023
979-8-3503-2242-2
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2991414