This work models some dynamical properties of a volatile thermally-activated micro-scale memristor and the emergence of nonlinear oscillations when a capacitor is placed in parallel to it. A bias voltage input with a series resistor is used to drive the memristor into a locally-active state, from which, as theoretically envisioned by Chua, complex nonlinear behaviors may arise. Experimental measurements and modeling results based on Chua's unfolding concept indicate that the local activity of the memristor is indeed at the basis for the occurrence of the limit-cycle oscillations.

Unfolding the local activity of a memristor / Ascoli, A; Slesazeck, S; Tetzlaff, R; Mähne, H; Mikolajick, T. - ELETTRONICO. - (2014). (Intervento presentato al convegno IEEE International Workshop on Cellular Nanoscale Networks and their Applications tenutosi a Notre Dame, IN (USA) nel 29-31 July, 2014) [10.1109/CNNA.2014.6888591].

Unfolding the local activity of a memristor

Ascoli A;
2014

Abstract

This work models some dynamical properties of a volatile thermally-activated micro-scale memristor and the emergence of nonlinear oscillations when a capacitor is placed in parallel to it. A bias voltage input with a series resistor is used to drive the memristor into a locally-active state, from which, as theoretically envisioned by Chua, complex nonlinear behaviors may arise. Experimental measurements and modeling results based on Chua's unfolding concept indicate that the local activity of the memristor is indeed at the basis for the occurrence of the limit-cycle oscillations.
2014
978-1-4799-6007-1
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2989725