Archivio Istituzionale della RicercaA special subset of two-terminal elements providing pinched hysteresis loops in the voltage-current plane with the lobe area increasing with the frequency is analysed. These devices are identified as non-memristive systems and the sufficient condition for their hysteresis loop to be pinched at the origin is derived. It turns out that the analysed behaviour can be observed only for just one concrete initial state of the device.This knowledge is conclusive for understanding why such devices cannot be regarded as memristors.
About v-i pinched hysteresis of some non-memristive systems / Biolek, D; Biolek, Z; Biolkova, V; Ascoli, A; Tetzlaff, R. - In: MATHEMATICAL PROBLEMS IN ENGINEERING. - ISSN 1024-123X. - ELETTRONICO. - 2018:(2018), pp. 1-10. [10.1155/2018/1747865]
About v-i pinched hysteresis of some non-memristive systems
Ascoli A;
2018
Abstract
A special subset of two-terminal elements providing pinched hysteresis loops in the voltage-current plane with the lobe area increasing with the frequency is analysed. These devices are identified as non-memristive systems and the sufficient condition for their hysteresis loop to be pinched at the origin is derived. It turns out that the analysed behaviour can be observed only for just one concrete initial state of the device.This knowledge is conclusive for understanding why such devices cannot be regarded as memristors.
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About v-i Pinched Hysteresis of Some Non-Memristive Systems.pdf
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https://hdl.handle.net/11583/2988737