In this paper1 a stability analysis sheds light into aspects of memristor circuit design, revealing a circuit theoretic technique for the stabilization of the NDR portion of the device DC characteristic. This type of studies supports the work of designers exploring memristor potential in electronics. Concepts from nonlinear dynamics theory allow us to gain a deep understanding of the dynamics of our locally-active memristor. The analysis provides hints on how to design an oscillator where limit-cycle behavior emerges from the locally-active threshold switching of the memristor, as theoretically proved here.
Stability analysis supports memristor circuit design / Ascoli, A; Tetzlaff, R; Slesazeck, S; Mähne, H; Mikolajick, T. - ELETTRONICO. - (2015), pp. 1138-1141. (Intervento presentato al convegno IEEE Int. Symp. Circuits and Systems (ISCAS) tenutosi a Lisbon (Portugal) nel 24-27 May 2015) [10.1109/ISCAS.2015.7168839].
Stability analysis supports memristor circuit design
Ascoli A;
2015
Abstract
In this paper1 a stability analysis sheds light into aspects of memristor circuit design, revealing a circuit theoretic technique for the stabilization of the NDR portion of the device DC characteristic. This type of studies supports the work of designers exploring memristor potential in electronics. Concepts from nonlinear dynamics theory allow us to gain a deep understanding of the dynamics of our locally-active memristor. The analysis provides hints on how to design an oscillator where limit-cycle behavior emerges from the locally-active threshold switching of the memristor, as theoretically proved here.File | Dimensione | Formato | |
---|---|---|---|
Stability analysis supports memristor circuit design.pdf
non disponibili
Descrizione: Contributo in Atti di convegno
Tipologia:
2a Post-print versione editoriale / Version of Record
Licenza:
Non Pubblico - Accesso privato/ristretto
Dimensione
677.5 kB
Formato
Adobe PDF
|
677.5 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11583/2988522