We present the mathematical investigation of static pattern formation in a Memristor Cellular Nonlinear Network (M-CNN), in consideration of the theory of local activity. The M-CNN has a planar grid form composed of identical memristive cells, which are purely resistively coupled to each other. The single cell contains a DC voltage source, a bias resistor, and a locally active memristor in parallel with a capacitor. The memristor model employed has a simple generic form which helps to reduce the simulation time, and has a functional AC equivalent circuit which facilitates further calculations. We adopt a circuit theoretical approach for the stability analysis of the single cell and a 3-cell ring configuration, as well as the examination of local activity, edge-of-chaos, and sharp-edge-of-chaos domains, which helps us to interpret the results in a better way. The emergence of static patterns is successfully confirmed by simulating the proposed resistively coupled M-CNN utilizing locally active memristors.

Mathematical Investigation of Static Pattern Formation with a Locally Active Memristor Model / Demirkol, As; Ascoli, A; and Tetzlaff, R. - ELETTRONICO. - (2021). (Intervento presentato al convegno 17th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA) tenutosi a Catania (Italy) nel 29 September 2021 - 01 October 2021) [10.1109/CNNA49188.2021.9610811].

Mathematical Investigation of Static Pattern Formation with a Locally Active Memristor Model

Ascoli A;
2021

Abstract

We present the mathematical investigation of static pattern formation in a Memristor Cellular Nonlinear Network (M-CNN), in consideration of the theory of local activity. The M-CNN has a planar grid form composed of identical memristive cells, which are purely resistively coupled to each other. The single cell contains a DC voltage source, a bias resistor, and a locally active memristor in parallel with a capacitor. The memristor model employed has a simple generic form which helps to reduce the simulation time, and has a functional AC equivalent circuit which facilitates further calculations. We adopt a circuit theoretical approach for the stability analysis of the single cell and a 3-cell ring configuration, as well as the examination of local activity, edge-of-chaos, and sharp-edge-of-chaos domains, which helps us to interpret the results in a better way. The emergence of static patterns is successfully confirmed by simulating the proposed resistively coupled M-CNN utilizing locally active memristors.
2021
978-1-6654-3948-0
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2988489