In this paper, we propose a new model for practical, nano-scale, NbO2-based Mott memristors, which is based on a thorough analysis performed on a recently presented physicsbased model for these devices. Our investigations revealed that the 3D Poole-Frenkel conduction mechanism adopted in the aforementioned model, can be well-approximated by a transport equation in which: a) memristor current is expressed as a linear function of memristor voltage and b) the device memductance is solely dependent on the device temperature which represents the memristor state. The resulting simplified mathematical form of the original differential algebraic equation set is not only more suitable for simulating large-scale, nano-scale NbO2-based memristor circuits, but is also ideal for circuit-theoretic investigations which may allow an in depth understanding of the peculiar nonlinear behaviors of these devices.

A Simplified Model for a NbO2 Mott Memristor Physical Realization / Messaris, I; Tetzlaff, R; Ascoli, A; Williams, Rs; Kumar, S; Chua, L. - STAMPA. - (2020). (Intervento presentato al convegno 2020 IEEE International Symposium on Circuits and Systems (ISCAS) tenutosi a Sevilla (Spain) nel 12-14 October 2020) [10.1109/ISCAS45731.2020.9181036].

A Simplified Model for a NbO2 Mott Memristor Physical Realization

Ascoli A;
2020

Abstract

In this paper, we propose a new model for practical, nano-scale, NbO2-based Mott memristors, which is based on a thorough analysis performed on a recently presented physicsbased model for these devices. Our investigations revealed that the 3D Poole-Frenkel conduction mechanism adopted in the aforementioned model, can be well-approximated by a transport equation in which: a) memristor current is expressed as a linear function of memristor voltage and b) the device memductance is solely dependent on the device temperature which represents the memristor state. The resulting simplified mathematical form of the original differential algebraic equation set is not only more suitable for simulating large-scale, nano-scale NbO2-based memristor circuits, but is also ideal for circuit-theoretic investigations which may allow an in depth understanding of the peculiar nonlinear behaviors of these devices.
2020
978-1-7281-3320-1
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2988458