Monolithic 3-Terminal Perovskite/Silicon HBT-Based Tandem Compatible with Industrial Silicon Bottom Cells: A Theoretical Study

erovskite/silicon tandem solar cells are among the most promising solutions to overcome the efficiency bottleneck of single-gap Si cells. Multi-terminal configurations are interesting alternatives to the more studied series connected two-terminal tandem, because they allow for looser band gap requirements and higher energy yield in the field. Among three-terminal architectures, the heterostructure bipolar transistor (HBT) solar cell offers a promising approach for the integration of the top perovskite cell with both-side contacted silicon cells, which are the industry standard. Material engineering makes it possible to prevent minority carriers transport across the interface layers between the two sub-cells, allowing them to work independently. However, the introduction of the middle contact at the interface layers requires the adoption of interdigitated contact grids for current collection, whose associated optical and resistive losses need to be minimized to not jeopardize the high efficiency potential of the intrinsic device. In this work, we use physics-based and circuit-level simulations to address such issues in the perspective of developing high efficiency large-area perovskite/silicon tandems with 3T-HBT structure.