Series device stacking has proved to be a very interesting solution for developing high-voltage high-power microwave amplifiers in low-breakdown technologies. The availability of 3-terminal device nonlinear models that are accurate and reliable, yet computationally efficient, in simulating a pseudo-common-gate stage are of crucial importance for developing a stacked power amplifier. This work presents the extraction and validation of a 3-terminal X-parameter model of a GaAs MESFET from physics-based simulations. Remarkable accuracy can be obtained by properly selecting the port terminations, accounting for the peculiar circuit scheme adopted for model extraction.

TCAD-based Pseudo-Common-Gate X-PAR Model for GaAs Stacked Power Amplifier Design / Ramella, C.; Donati Guerrieri, S.; Pirola, M.. - ELETTRONICO. - (2023), pp. 1-4. (Intervento presentato al convegno 2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 tenutosi a Aveiro (Portugal) nel 08-11 November 2023) [10.1109/INMMIC57329.2023.10321788].

TCAD-based Pseudo-Common-Gate X-PAR Model for GaAs Stacked Power Amplifier Design

Ramella C.;Donati Guerrieri S.;Pirola M.
2023

Abstract

Series device stacking has proved to be a very interesting solution for developing high-voltage high-power microwave amplifiers in low-breakdown technologies. The availability of 3-terminal device nonlinear models that are accurate and reliable, yet computationally efficient, in simulating a pseudo-common-gate stage are of crucial importance for developing a stacked power amplifier. This work presents the extraction and validation of a 3-terminal X-parameter model of a GaAs MESFET from physics-based simulations. Remarkable accuracy can be obtained by properly selecting the port terminations, accounting for the peculiar circuit scheme adopted for model extraction.
2023
979-8-3503-2242-2
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2984830