Archivio Istituzionale della RicercaE-mode GaN HEMTs in half bridges can be turned on by spurious voltage spikes resulting from output voltage switching or even damaged by undervoltages (overvoltages) caused by the gate driver output switching. This work proposes a solution to address such problems without lowering the gate loop stray inductance.
dV/dt Immunity of Half Bridges Based on 650V Enhancement Mode GaN HEMTs / Fiori, Franco; Nubling, Marcus; Klotz, Frank. - STAMPA. - (2023), pp. 1-8. (Intervento presentato al convegno 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) tenutosi a Aalborg, Denmark nel 04-08 September 2023) [10.23919/EPE23ECCEEurope58414.2023.10264554].
dV/dt Immunity of Half Bridges Based on 650V Enhancement Mode GaN HEMTs
Fiori Franco;
2023
Abstract
E-mode GaN HEMTs in half bridges can be turned on by spurious voltage spikes resulting from output voltage switching or even damaged by undervoltages (overvoltages) caused by the gate driver output switching. This work proposes a solution to address such problems without lowering the gate loop stray inductance.
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Descrizione: fiori_dv_dt_immunity
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https://hdl.handle.net/11583/2983904