Archivio Istituzionale della RicercaThis paper presents the design, fabrication, and experimental characterization of a 3-way multi-stage Doherty amplifier working in the 5G NR FR2 bands centered at 28 GHz. The amplifier, realized in the WIN Semiconductors' 150 nm gate-length GaN-SiC integrated technology, is optimized for linearity as well as wide back-off efficient operation. The experimental characterization in continuous wave and under modulated signal excitation evidences performance well in line with the present state of the art in terms of bandwidth, power levels, efficiency, and linearity, without the need for additional pre-distortion.
A 3-Way GaN Doherty Power Amplifier for 28 GHz 5G FR2 Operation / Piacibello, Anna; Giofrè, Rocco; Colantonio, Paolo; Camarchia, Vittorio. - ELETTRONICO. - (2023), pp. 327-330. (Intervento presentato al convegno 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023 tenutosi a San Diego, CA, USA nel 11-16 June 2023) [10.1109/IMS37964.2023.10187996].
A 3-Way GaN Doherty Power Amplifier for 28 GHz 5G FR2 Operation
Piacibello, Anna;Camarchia, Vittorio
2023
Abstract
This paper presents the design, fabrication, and experimental characterization of a 3-way multi-stage Doherty amplifier working in the 5G NR FR2 bands centered at 28 GHz. The amplifier, realized in the WIN Semiconductors' 150 nm gate-length GaN-SiC integrated technology, is optimized for linearity as well as wide back-off efficient operation. The experimental characterization in continuous wave and under modulated signal excitation evidences performance well in line with the present state of the art in terms of bandwidth, power levels, efficiency, and linearity, without the need for additional pre-distortion.
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A_3-Way_GaN_Doherty_Power_Amplifier_for_28_GHz_5G_FR2_Operation.pdf
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IMS2023_POSEIDON.pdf
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https://hdl.handle.net/11583/2983503