Archivio Istituzionale della RicercaIn this paper, we adopt our in-house physics-based solver VENUS (Vcsel Electro-optho-thermal NUmerical Simulator) to assess the static output characteristics of an AlGaAs/GaAs TJ-VCSEL emitting at 850 nm. To this aim, VENUS is extended to exploit a combined drift-diffusion model and NEGF formalism, that accurately captures tunneling effects across the TJ. The results are compared to a commercial pin-like VCSEL, at temperatures ranging from 20 to 110°C, to cover a broad set of operations from room temperature to harsh environments.
Physics-based modeling of AlGaAs tunnel junction VCSELs: a comparative appraisal / Gullino, Alberto; Torrelli, Valerio; D’Alessandro, Martino; Tibaldi, Alberto; Bertazzi, Francesco; Goano, Michele; Debernardi, Pierluigi. - ELETTRONICO. - (2023), pp. 99-100. (Intervento presentato al convegno 23rd International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2023) tenutosi a Turin, Italy nel 18 - 21 September 2023) [10.1109/NUSOD59562.2023.10273507].
Physics-based modeling of AlGaAs tunnel junction VCSELs: a comparative appraisal
Torrelli, Valerio;D’Alessandro, Martino;Tibaldi, Alberto;Bertazzi, Francesco;Goano, Michele;
2023
Abstract
In this paper, we adopt our in-house physics-based solver VENUS (Vcsel Electro-optho-thermal NUmerical Simulator) to assess the static output characteristics of an AlGaAs/GaAs TJ-VCSEL emitting at 850 nm. To this aim, VENUS is extended to exploit a combined drift-diffusion model and NEGF formalism, that accurately captures tunneling effects across the TJ. The results are compared to a commercial pin-like VCSEL, at temperatures ranging from 20 to 110°C, to cover a broad set of operations from room temperature to harsh environments.
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https://hdl.handle.net/11583/2982938