The ARCADIA (Advanced Readout CMOS Architectures with Depleted Integrated sensor Arrays) collaboration has developed 25 µm pitch Fully Depleted Monolithic Active Pixel Sensors (MAPS) based on a modified 110 nm CMOS process in collaboration with LFoundry. This work illustrates a set of simulations performed on this detector technology, with the aim of investigating its capabilities for radiation detection applications. Three-dimensional Technology Computer Aided Design (TCAD) simulations have been performed in order to extract the electric field and electrostatic potential maps suitable to execute Monte Carlo simulations, providing high statistics of particle-sensor interaction in a reasonable computing time. The simulation flow will be described in detail and the main results will be pointed out.
Monte Carlo simulations of Fully Depleted CMOS pixel sensors for radiation detection applications / Ferrero, Chiara; Neubüser, Coralie; Pancheri, Lucio; Rivetti, Angelo. - ELETTRONICO. - (2023), pp. 101-104. (Intervento presentato al convegno 2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME) tenutosi a Valencia, Spain nel 18-21 June 2023) [10.1109/PRIME58259.2023.10161878].
Monte Carlo simulations of Fully Depleted CMOS pixel sensors for radiation detection applications
Ferrero,Chiara;
2023
Abstract
The ARCADIA (Advanced Readout CMOS Architectures with Depleted Integrated sensor Arrays) collaboration has developed 25 µm pitch Fully Depleted Monolithic Active Pixel Sensors (MAPS) based on a modified 110 nm CMOS process in collaboration with LFoundry. This work illustrates a set of simulations performed on this detector technology, with the aim of investigating its capabilities for radiation detection applications. Three-dimensional Technology Computer Aided Design (TCAD) simulations have been performed in order to extract the electric field and electrostatic potential maps suitable to execute Monte Carlo simulations, providing high statistics of particle-sensor interaction in a reasonable computing time. The simulation flow will be described in detail and the main results will be pointed out.File | Dimensione | Formato | |
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https://hdl.handle.net/11583/2981382