The recent demonstration of optically active telecom emitters in silicon has paved the way for realizing industrial-scale silicon-based solid-state quantum photonic platforms. The scientific community has been pursuing the implementation of novel single-photon devices for quantum technology applications by introducing extrinsic impurities inside the silicon lattice upon ion implantation. Here we report the optical characterization through single-photon microscopy of intrinsic W centers in high-purity silicon substrates upon carbon implantation and subsequent rapid thermal annealing. The photoluminescence investigation of their emission properties at cryogenic temperatures allowed us to identify the effects of the post-implantation thermal treatment in the formation of telecom quantum emitters based on interstitial silicon clusters upon the introduction of an extrinsic atomic species.
Study of W centers formation in silicon upon ion implantation and rapid thermal annealing / Andrini, G.; Zanelli, G.; Tchernij, S. Ditalia; Corte, E.; Hernandez, E. Nieto; Verna, A.; Cocuzza, M.; Bernardi, E.; Virzi, S.; Traina, P.; Degiovanni, I. P.; Olivero, P.; Genovese, M.; Forneris, J.. - ELETTRONICO. - (2023), pp. 1-2. (Intervento presentato al convegno 2023 IEEE Photonics Society Summer Topicals Meeting Series (SUM) tenutosi a Sicily, Italy nel 17-19 July 2023) [10.1109/SUM57928.2023.10224442].
Study of W centers formation in silicon upon ion implantation and rapid thermal annealing
Andrini, G.;Cocuzza, M.;
2023
Abstract
The recent demonstration of optically active telecom emitters in silicon has paved the way for realizing industrial-scale silicon-based solid-state quantum photonic platforms. The scientific community has been pursuing the implementation of novel single-photon devices for quantum technology applications by introducing extrinsic impurities inside the silicon lattice upon ion implantation. Here we report the optical characterization through single-photon microscopy of intrinsic W centers in high-purity silicon substrates upon carbon implantation and subsequent rapid thermal annealing. The photoluminescence investigation of their emission properties at cryogenic temperatures allowed us to identify the effects of the post-implantation thermal treatment in the formation of telecom quantum emitters based on interstitial silicon clusters upon the introduction of an extrinsic atomic species.File | Dimensione | Formato | |
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https://hdl.handle.net/11583/2981373