New high-voltage power MOSFET for power conversion applications

The aim of this paper is to explore the switching capability of a new kind of high-voltage power MOSFET device called multiple drain mesh (MDmesh). This new power MOSFET shows very interesting characteristics in terms of both die size reduction and switching performances. By the used technological process a considerable reduction in silicon conduction losses per area unit has been observed, thus allowing a noticeable resizing of the devices and the use of smaller packages. Moreover, a strong reduction in the parasitic capacitance (i.e. gate charge) with an improved switching behavior has been observed. The power MOSFET that we are now introducing can replace standard power MOSFET devices in switch mode power supply (SMPS) or power factor correction (PFC) applications, thus allowing a valuable reduction of the power losses to be obtained and an increase in the converter efficiency, whereas the switching frequency is unchanged. This paper starts by describing the main technological issues of the new device, which is compared to more standard devices. The switching transients have been carried out looking for actual applications, and the advantages of the new device are discussed in terms of energy saving and performance improvement. Finally, a comparison with a standard device with the same voltage and current ratings is made and discussed, showing the improved performances of the new device.