This paper proposes the characterization, parameter estimation, and modeling of a monolithic cascade, which has been called emitter-switching bipolar transistor (ESBT), suitable for high-voltage applications. Such an innovative device composes of a high-voltage power BJT and low-voltage power MOSFET that are connected in cascade connection, with the MOSFET drain embedded inside the BJT emitter. Being a four-terminal device, the ESBT requires a suitable characterization procedure aimed to identify the main electrical parameters relative to the inner BJT and MOSFET parts. Various test configurations that are needed to characterize the ESBT are presented and discussed. The device has been characterized to derive a behavioral model implemented in the PSpice simulator in order to predict the device performances.

Characterization, parameter identification and modeling of a new monolithic emitter-switching bipolar transistor / Musumeci, S.; Pagano, R.; Raciti, A.; Porto, C.; Ronsisvalle, C.; Scollo, R.. - ELETTRONICO. - 3:(2004), pp. 1924-1931. (Intervento presentato al convegno IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting tenutosi a Seattle, WA, USA nel 03-07 October 2004) [10.1109/IAS.2004.1348732].

Characterization, parameter identification and modeling of a new monolithic emitter-switching bipolar transistor

S. Musumeci;
2004

Abstract

This paper proposes the characterization, parameter estimation, and modeling of a monolithic cascade, which has been called emitter-switching bipolar transistor (ESBT), suitable for high-voltage applications. Such an innovative device composes of a high-voltage power BJT and low-voltage power MOSFET that are connected in cascade connection, with the MOSFET drain embedded inside the BJT emitter. Being a four-terminal device, the ESBT requires a suitable characterization procedure aimed to identify the main electrical parameters relative to the inner BJT and MOSFET parts. Various test configurations that are needed to characterize the ESBT are presented and discussed. The device has been characterized to derive a behavioral model implemented in the PSpice simulator in order to predict the device performances.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2980143