Archivio Istituzionale della RicercaA new monolithic emitter-switching bipolar transistor (ESBT) having a good switching behavior, along with a highly performing on-state conduction characteristic, is reported. The device is the cascode connection of a high voltage bipolar transistor and a fast-switching low-voltage power MOSFET, realized inside the BJT part. The structure, which is based on a monolithic technology, has been experimentally analyzed to derive several results, particularly dwelling upon the on-state conduction characteristic and the storage time behavior of the presented device.
A new monolithic power actuator devoted to high voltage and high frequency applications / Musumeci, S.; Pagano, R.; Raciti, A.; Buonomo, S.; Enea, V.; Gullotta, G.; Ronsisvalle, C.. - ELETTRONICO. - 16:(2004), pp. 445-448. (Intervento presentato al convegno 2004 International Symposium on Power Semiconductor Devices and ICs tenutosi a Kitakyushu, Japan nel 24-27 May 2004) [10.1109/WCT.2004.240353].
A new monolithic power actuator devoted to high voltage and high frequency applications
S. Musumeci;
2004
Abstract
A new monolithic emitter-switching bipolar transistor (ESBT) having a good switching behavior, along with a highly performing on-state conduction characteristic, is reported. The device is the cascode connection of a high voltage bipolar transistor and a fast-switching low-voltage power MOSFET, realized inside the BJT part. The structure, which is based on a monolithic technology, has been experimentally analyzed to derive several results, particularly dwelling upon the on-state conduction characteristic and the storage time behavior of the presented device.
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https://hdl.handle.net/11583/2980121