Super-junction MOSFET and SiC diode application for the efficiency improvement in a boost PFC converter

This paper deals with the use of the last generation of super-junction (SJ) power MOSFET devices together with silicon carbide (SiC) Schottky diodes in an actual converter application. The main technological issues on the used devices are described and discussed. The impact of the particular features of the devices are analyzed and quantified in a case study regarding a DC-DC boost converter, which is used in a power factor corrector (PFC) converter. The switching transients have been carried out looking for actual applications, and the advantages of the devices are discussed in terms of energy saving and performance improvement. Moreover a comparison between the proposed solution and a traditional one, with reference to the electrical characteristics and the switching performances in a continuous mode 200 W PFC converter, has been carried out. Furthermore some considerations have been presented on the obtainable efficiency improvement of the converter by using the two proposed devices