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his paper deals with the optimized application of low voltage power MOSFETs in high frequency LLC DC-DC converter as synchronous rectification switches. The used semiconductor devices are trench MOSFET with improved figure of merit (FOM). The value of such a quantity is a good indicator that the MOSFET devices can operate at both high switching speed and extended current capability, as they are required in these DC-DC converter applications. Firstly, the design of low voltage MOSFETs as synchronous rectification switches is treated and discussed. Furthermore, an extended characterization of trench MOSFETs on experimental boards of a LLC DC-DC power converter is carried out

Synchronous rectification with low voltage MOSFETs in LLC converters / Di Mauro, S.; Musumeci, S.; Raciti, A.; Fusillo, F.; Scrimizzi, F.; Scollo, R.. - ELETTRONICO. - (2017), pp. 1-6. (Intervento presentato al convegno 2017 AEIT International Annual Conference, AEIT 2017 tenutosi a ita nel 2017) [10.23919/AEIT.2017.8240536].

Synchronous rectification with low voltage MOSFETs in LLC converters

S. Musumeci;
2017

Abstract

his paper deals with the optimized application of low voltage power MOSFETs in high frequency LLC DC-DC converter as synchronous rectification switches. The used semiconductor devices are trench MOSFET with improved figure of merit (FOM). The value of such a quantity is a good indicator that the MOSFET devices can operate at both high switching speed and extended current capability, as they are required in these DC-DC converter applications. Firstly, the design of low voltage MOSFETs as synchronous rectification switches is treated and discussed. Furthermore, an extended characterization of trench MOSFETs on experimental boards of a LLC DC-DC power converter is carried out
2017
978-8-8872-3737-5
4.1 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2980041