his paper deals with the optimized application of low voltage power MOSFETs in high frequency LLC DC-DC converter as synchronous rectification switches. The used semiconductor devices are trench MOSFET with improved figure of merit (FOM). The value of such a quantity is a good indicator that the MOSFET devices can operate at both high switching speed and extended current capability, as they are required in these DC-DC converter applications. Firstly, the design of low voltage MOSFETs as synchronous rectification switches is treated and discussed. Furthermore, an extended characterization of trench MOSFETs on experimental boards of a LLC DC-DC power converter is carried out
Synchronous rectification with low voltage MOSFETs in LLC converters / Di Mauro, S.; Musumeci, S.; Raciti, A.; Fusillo, F.; Scrimizzi, F.; Scollo, R.. - ELETTRONICO. - (2017), pp. 1-6. (Intervento presentato al convegno 2017 AEIT International Annual Conference, AEIT 2017 tenutosi a ita nel 2017) [10.23919/AEIT.2017.8240536].
Synchronous rectification with low voltage MOSFETs in LLC converters
S. Musumeci;
2017
Abstract
his paper deals with the optimized application of low voltage power MOSFETs in high frequency LLC DC-DC converter as synchronous rectification switches. The used semiconductor devices are trench MOSFET with improved figure of merit (FOM). The value of such a quantity is a good indicator that the MOSFET devices can operate at both high switching speed and extended current capability, as they are required in these DC-DC converter applications. Firstly, the design of low voltage MOSFETs as synchronous rectification switches is treated and discussed. Furthermore, an extended characterization of trench MOSFETs on experimental boards of a LLC DC-DC power converter is carried outFile | Dimensione | Formato | |
---|---|---|---|
Synchronous_rectification_with_low_voltage_MOSFETs_in_LLC_converters.pdf
non disponibili
Tipologia:
2a Post-print versione editoriale / Version of Record
Licenza:
Non Pubblico - Accesso privato/ristretto
Dimensione
596.97 kB
Formato
Adobe PDF
|
596.97 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11583/2980041