Archivio Istituzionale della RicercaThis paper present a two-stage Doherty power amplifier designed to maximize the efficiency at 6 dB back-off while minimizing the complexity in terms of bias voltages. The amplifier has been manufactured on a GaN-SiC 150 nm monolithic microwave integrated circuit technology. The fabricated chip, measured in continuous wave conditions, maintains a linear gain higher than 13 dB, a saturated output power in excess of 34 dBm, with a power-added efficiency higher than 20% both at saturation and at 6 dB output back-off, over the 14.5 GHz-17.25 GHz band, favorably comparing with the present state of the art for similar applications.
Low-Bias-Complexity Ku-band GaN MMIC Doherty Power Amplifier / Naah, G.; Piacibello, A.; Camarchia, V.; Colantonio, P.; Giofre, R.. - ELETTRONICO. - 2022:(2022), pp. 1041-1043. (Intervento presentato al convegno 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022 tenutosi a Denver, CO, USA nel 19-24 June 2022) [10.1109/IMS37962.2022.9865439].
Low-Bias-Complexity Ku-band GaN MMIC Doherty Power Amplifier
Piacibello A.;Camarchia V.;
2022
Abstract
This paper present a two-stage Doherty power amplifier designed to maximize the efficiency at 6 dB back-off while minimizing the complexity in terms of bias voltages. The amplifier has been manufactured on a GaN-SiC 150 nm monolithic microwave integrated circuit technology. The fabricated chip, measured in continuous wave conditions, maintains a linear gain higher than 13 dB, a saturated output power in excess of 34 dBm, with a power-added efficiency higher than 20% both at saturation and at 6 dB output back-off, over the 14.5 GHz-17.25 GHz band, favorably comparing with the present state of the art for similar applications.
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IMS2022_DPAWINMECSA_15GHz.pdf
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Low-Bias-Complexity_Ku-band_GaN_MMIC_Doherty_Power_Amplifier.pdf
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https://hdl.handle.net/11583/2979225