Research teams from industry and academia have highlighted the advantages obtained from the introduction of Silicon Carbide (SiC) traction inverter power modules. Similarly, commercial solutions already benefit from SiC traction inverter in terms of performance as well as in terms of economical investment. Notwithstanding, the good features there are some issues due to the fast switching ability of SiC MOSFET. In such a contest, is the fine-tuning of a proper simulation tool is the first for an optimal design of the conversion systems, especially, the snubbers necessary to mitigate turn-off overvoltage and ringing of SiC MOSFET devices. In this perspective, this paper combines Ansys Q3D analysis and Spice simulations to foresee the SiC MOSFET Power Module waveforms. The experimental results have highlighted a good accuracy of the tool at predicting the performance of the module and the boundary operating conditions.

Overvoltage and Ringing in a State-of-the-art SiC MOSFET Power Module for Traction Inverters / Fallico, A. R.; Rizzo, S. A.; Raciti, A.; Mandrile, F.; Musumeci, S.; Abbatelli, L.; Venuti, E.. - (2020). (Intervento presentato al convegno 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE) tenutosi a Turin, Italy nel 18-20 November 2020).

Overvoltage and Ringing in a State-of-the-art SiC MOSFET Power Module for Traction Inverters

Mandrile F.;Musumeci S.;
2020

Abstract

Research teams from industry and academia have highlighted the advantages obtained from the introduction of Silicon Carbide (SiC) traction inverter power modules. Similarly, commercial solutions already benefit from SiC traction inverter in terms of performance as well as in terms of economical investment. Notwithstanding, the good features there are some issues due to the fast switching ability of SiC MOSFET. In such a contest, is the fine-tuning of a proper simulation tool is the first for an optimal design of the conversion systems, especially, the snubbers necessary to mitigate turn-off overvoltage and ringing of SiC MOSFET devices. In this perspective, this paper combines Ansys Q3D analysis and Spice simulations to foresee the SiC MOSFET Power Module waveforms. The experimental results have highlighted a good accuracy of the tool at predicting the performance of the module and the boundary operating conditions.
2020
978-8-8872-3749-8
File in questo prodotto:
File Dimensione Formato  
Overvoltage_and_Ringing_in_a_State-of-the-art_SiC_MOSFET_Power_Module_for_Traction_Inverters.pdf

non disponibili

Tipologia: 2a Post-print versione editoriale / Version of Record
Licenza: Non Pubblico - Accesso privato/ristretto
Dimensione 787.9 kB
Formato Adobe PDF
787.9 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2979039