We report transient simulations of Ge-on-Si vertical pin waveguide photodetectors (WPDs), where the optical generation term used by the time-domain model is the FDTD solution of the electromagnetic problem treated as a spatially-distributed pulsed signal. This approach, validated against experimental measurements of the frequency response, paves the way to future studies of the dynamic response of WPDs, enabling the description of complex modulation schemes including saturation effects and current tails due to slow carriers.

3D multiphysics transient modeling of vertical Ge-on-Si pin waveguide photodetectors / Alasio, Matteo; Franco, Paolo; Tibaldi, Alberto; Bertazzi, Francesco; Namnabat, Soha; Adams, Donald; Gothoskar, Prakash; Masini, Gianlorenzo; Forghieri, Fabrizio; Ghione, Giovanni; Goano, Michele. - ELETTRONICO. - 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD):(2022), pp. 5-6. ((Intervento presentato al convegno 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) tenutosi a Torino, Italia nel 12-16 settembre 2022 [10.1109/NUSOD54938.2022.9894739].

3D multiphysics transient modeling of vertical Ge-on-Si pin waveguide photodetectors

Alasio, Matteo;Tibaldi, Alberto;Bertazzi, Francesco;Ghione, Giovanni;Goano, Michele
2022

Abstract

We report transient simulations of Ge-on-Si vertical pin waveguide photodetectors (WPDs), where the optical generation term used by the time-domain model is the FDTD solution of the electromagnetic problem treated as a spatially-distributed pulsed signal. This approach, validated against experimental measurements of the frequency response, paves the way to future studies of the dynamic response of WPDs, enabling the description of complex modulation schemes including saturation effects and current tails due to slow carriers.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2971775