Vertical-cavity surface-emitting lasers are promising light sources for sensing and spectroscopy applications in the midinfrared 3 - 4 μm spectral region. A type-II superlattice active region is used for carrier injection and confinement, while a buried tunnel junction defines a current aperture, decreasing the series resistivity. Highly nanostructured to optimize device performance, mid-infrared VCSELs pose modeling challenges beyond semiclassical approaches. We propose a quantum-corrected semiclassical approach to device design and optimization, complementing a drift-diffusion solver with a nonequilibrium Green’s function description of band-to-band tunneling in the buried tunnel junction, and a local density of states computed from the solution of the Schrödinger equation in the superlattice active region.
Modeling carrier transport in mid-infrared VCSELs with type-II superlattices and tunnel junctions / Torrelli, Valerio; Montoya, Jesus Alberto Gonzalez; Tibaldi, Alberto; Debernardi, Pierluigi; Simaz, Andrea; Belkin, Mikhail A.; Goano, Michele; Bertazzi, Francesco. - ELETTRONICO. - 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD):(2022), pp. 55-56. (Intervento presentato al convegno 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) tenutosi a Torino, Italia nel 12-16 settembre 2022) [10.1109/NUSOD54938.2022.9894782].
Modeling carrier transport in mid-infrared VCSELs with type-II superlattices and tunnel junctions
Torrelli, Valerio;Montoya, Jesus Alberto Gonzalez;Tibaldi, Alberto;Goano, Michele;Bertazzi, Francesco
2022
Abstract
Vertical-cavity surface-emitting lasers are promising light sources for sensing and spectroscopy applications in the midinfrared 3 - 4 μm spectral region. A type-II superlattice active region is used for carrier injection and confinement, while a buried tunnel junction defines a current aperture, decreasing the series resistivity. Highly nanostructured to optimize device performance, mid-infrared VCSELs pose modeling challenges beyond semiclassical approaches. We propose a quantum-corrected semiclassical approach to device design and optimization, complementing a drift-diffusion solver with a nonequilibrium Green’s function description of band-to-band tunneling in the buried tunnel junction, and a local density of states computed from the solution of the Schrödinger equation in the superlattice active region.File | Dimensione | Formato | |
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https://hdl.handle.net/11583/2971773