Charge carrier concentrations of 10^14 cm^-2 induce a superconducting state in MoS2. Here we report low-temperature transport measurements in electrical double layer-gated MoS2 flakes from 4 to 10 layers. We observe two kinks in the resistivity as a function of doping, which indicate the crossing of the spin-orbit split sub-bands Q1 and Q2. Superconductivity does not appear until both spin-orbit split sub-bands are simultaneously populated.

Multi-Valley Superconductivity in Ion-Gated MoS2 Layers / De Fazio, Domenico; Piatti, Erik; Daghero, Dario; Tamalampudi, Srinivasa R.; Yoon, Duhee; Gonnelli, Renato S.; C. Ferrari., Andrea. - ELETTRONICO. - (2018). ((Intervento presentato al convegno APS March Meeting 2018 tenutosi a Los Angeles, California, United States of America nel 5-9 March 2018.

Multi-Valley Superconductivity in Ion-Gated MoS2 Layers

Erik Piatti;Dario Daghero;Renato S. Gonnelli;
2018

Abstract

Charge carrier concentrations of 10^14 cm^-2 induce a superconducting state in MoS2. Here we report low-temperature transport measurements in electrical double layer-gated MoS2 flakes from 4 to 10 layers. We observe two kinks in the resistivity as a function of doping, which indicate the crossing of the spin-orbit split sub-bands Q1 and Q2. Superconductivity does not appear until both spin-orbit split sub-bands are simultaneously populated.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2965734