This paper presents a theoretical comparison of the electro-optical characteristics of 850nm GaAs/AlGaAs pin-and BTJ-based VCSELs. The calculations are based on a drift-diffusion model coupled with a NEGF formalism, able to model accurately the tunneling across the TJ. The resulting LIV characteristics demonstrate promising improvements, at both 25 and 80°C, enabled by TJ confinement scheme.
A multiscale approach for BTJ-VCSEL electro-optical analysis / Gullino, Alberto; Pecora, Simone; Tibaldi, Alberto; Bertazzi, Francesco; Goano, Michele; Debernardi, Pierluigi. - ELETTRONICO. - (2021), pp. 79-80. ((Intervento presentato al convegno 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) tenutosi a Turin, Italy nel 13-17 Settembre 2021 [10.1109/NUSOD52207.2021.9541423].
Titolo: | A multiscale approach for BTJ-VCSEL electro-optical analysis | |
Autori: | ||
Data di pubblicazione: | 2021 | |
Abstract: | This paper presents a theoretical comparison of the electro-optical characteristics of 850nm GaAs.../AlGaAs pin-and BTJ-based VCSELs. The calculations are based on a drift-diffusion model coupled with a NEGF formalism, able to model accurately the tunneling across the TJ. The resulting LIV characteristics demonstrate promising improvements, at both 25 and 80°C, enabled by TJ confinement scheme. | |
ISBN: | 978-1-6654-1276-6 | |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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http://hdl.handle.net/11583/2929024