Archivio Istituzionale della RicercaThis paper presents a theoretical comparison of the electro-optical characteristics of 850nm GaAs/AlGaAs pin-and BTJ-based VCSELs. The calculations are based on a drift-diffusion model coupled with a NEGF formalism, able to model accurately the tunneling across the TJ. The resulting LIV characteristics demonstrate promising improvements, at both 25 and 80°C, enabled by TJ confinement scheme.
A multiscale approach for BTJ-VCSEL electro-optical analysis / Gullino, Alberto; Pecora, Simone; Tibaldi, Alberto; Bertazzi, Francesco; Goano, Michele; Debernardi, Pierluigi. - ELETTRONICO. - (2021), pp. 79-80. (Intervento presentato al convegno 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) tenutosi a Turin, Italy nel 13-17 Settembre 2021) [10.1109/NUSOD52207.2021.9541423].
A multiscale approach for BTJ-VCSEL electro-optical analysis
Gullino, Alberto;Pecora, Simone;Tibaldi, Alberto;Bertazzi, Francesco;Goano, Michele;Debernardi, Pierluigi
2021
Abstract
This paper presents a theoretical comparison of the electro-optical characteristics of 850nm GaAs/AlGaAs pin-and BTJ-based VCSELs. The calculations are based on a drift-diffusion model coupled with a NEGF formalism, able to model accurately the tunneling across the TJ. The resulting LIV characteristics demonstrate promising improvements, at both 25 and 80°C, enabled by TJ confinement scheme.
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https://hdl.handle.net/11583/2929024