Over the past decade, perovskite materials have attracted great interest for terrestrial photovoltaic (PV) applications thanks to their cheapness and excellent optoelectronic properties such as tunable bandgap, high absorption coefficient, long carrier lifetime and diffusion length. Perovskites have excellent potential for the development of high efficiency and low cost silicon-based tandem solar cells. Several research studies have been performed about perovskite/silicon tandem solar cells obtaining good conversion efficiencies of about 26%. In this work, we propose a perovksite-silicon solar cell based on the three-terminal hetero-junction bipolar transistor (3T-HBJT) architecture that overcomes several constraints of the series connected double junction cell - i.e. current matching and the need of tunnel junctions or recombination layers - exploiting a simpler structure and achieving high efficiency. In order to evaluate its performance potential, we adopt the classical Hovel model extended to deal with the 3T-HBT structure, demonstrating efficiencies up to 28.6% for cells without antireflection coating.

Perovskite-Si solar cell: A three-terminal heterojunction bipolar transistor architecture / Giliberti, G.; Marti, A.; Cappelluti, F.. - ELETTRONICO. - 2020-:(2020), pp. 2696-2699. ((Intervento presentato al convegno 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 tenutosi a Calgary, AB, Canada nel 2020 [10.1109/PVSC45281.2020.9300949].

Perovskite-Si solar cell: A three-terminal heterojunction bipolar transistor architecture

Giliberti G.;Cappelluti F.
2020

Abstract

Over the past decade, perovskite materials have attracted great interest for terrestrial photovoltaic (PV) applications thanks to their cheapness and excellent optoelectronic properties such as tunable bandgap, high absorption coefficient, long carrier lifetime and diffusion length. Perovskites have excellent potential for the development of high efficiency and low cost silicon-based tandem solar cells. Several research studies have been performed about perovskite/silicon tandem solar cells obtaining good conversion efficiencies of about 26%. In this work, we propose a perovksite-silicon solar cell based on the three-terminal hetero-junction bipolar transistor (3T-HBJT) architecture that overcomes several constraints of the series connected double junction cell - i.e. current matching and the need of tunnel junctions or recombination layers - exploiting a simpler structure and achieving high efficiency. In order to evaluate its performance potential, we adopt the classical Hovel model extended to deal with the 3T-HBT structure, demonstrating efficiencies up to 28.6% for cells without antireflection coating.
File in questo prodotto:
File Dimensione Formato  
PVK_Si_3THBJT_conference - PROCEEDINGS version.pdf

accesso aperto

Descrizione: articolo principale
Tipologia: 2. Post-print / Author's Accepted Manuscript
Licenza: PUBBLICO - Tutti i diritti riservati
Dimensione 524.13 kB
Formato Adobe PDF
524.13 kB Adobe PDF Visualizza/Apri
PVK_Si_3THBJT_conference - PROCEEDINGS version_VOR.pdf

non disponibili

Descrizione: articolo principale . VoR
Tipologia: 2a Post-print versione editoriale / Version of Record
Licenza: Non Pubblico - Accesso privato/ristretto
Dimensione 983.65 kB
Formato Adobe PDF
983.65 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2927780