This work presents a self-biased 2-stacked power amplifier cell that shows, in simulations, an output power in excess of 33 dBm and gain and power added efficiency (PAE) above 6 dB and 27 %, respectively, over a 33.5 GHz to 39.5 GHz bandwidth. The cell has been developed on a commercial 100 nm GaN-on-Si process, applying space derating rules at center frequency, where the output power is almost 33.8 dBm, the associated gain is higher than 7 dB and PAE is above 35 %.
A Ka-band 33 dBm Stacked Power Amplifier Cell in 100 nm GaN-on-Si Technology / Ramella, C.; Pirola, M.; Colantonio, P.. - ELETTRONICO. - (2020), pp. 204-208. (Intervento presentato al convegno 23rd International Microwave and Radar Conference, MIKON 2020 tenutosi a Warsaw, Poland nel 5-8 Oct. 2020) [10.23919/MIKON48703.2020.9253861].
A Ka-band 33 dBm Stacked Power Amplifier Cell in 100 nm GaN-on-Si Technology
Ramella C.;Pirola M.;
2020
Abstract
This work presents a self-biased 2-stacked power amplifier cell that shows, in simulations, an output power in excess of 33 dBm and gain and power added efficiency (PAE) above 6 dB and 27 %, respectively, over a 33.5 GHz to 39.5 GHz bandwidth. The cell has been developed on a commercial 100 nm GaN-on-Si process, applying space derating rules at center frequency, where the output power is almost 33.8 dBm, the associated gain is higher than 7 dB and PAE is above 35 %.File | Dimensione | Formato | |
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StackedCell36GHz_final.pdf
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2020_MIKON_Stacked.pdf
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https://hdl.handle.net/11583/2927594